| 发明名称 |
Method and apparatus for detecting contaminants in ion-implanted wafer |
| 摘要 |
A method and apparatus for detecting contaminants in an ion-implanted wafer by annealing and activating the ion-implanted wafer by heating or charging or both, and measuring the thermal wave absorbance generated from the activated wafer.
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| 申请公布号 |
US6869215(B2) |
申请公布日期 |
2005.03.22 |
| 申请号 |
US20030447104 |
申请日期 |
2003.05.29 |
| 申请人 |
SAMSUNG ELECTRICS, CO., LTD |
发明人 |
YANG YU-SIN;CHON SANG-MUN;CHOI SUN-YONG;JUN CHUNG SAM;RYU KWAN-WOO;KIM PARK-SONG;EOM TAE-MIN |
| 分类号 |
G01N25/72;(IPC1-7):G01K11/00 |
主分类号 |
G01N25/72 |
| 代理机构 |
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