| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a technique capable of easily and accurately adjusting the wavelength dependence of reflectance of a light shielding film so as to properly and rapidly perform redesigning under transition of exposure wavelength, resist drawing wavelength, and inspection wavelength in a halftone phase shift mask. <P>SOLUTION: In a method for adjusting the wavelength dependence of reflectance of the light shielding film 3 in the halftone phase shift mask blank having on a transparent substrate 1 a translucent film 2 having a prescribed transmittance and phase shifting extent to exposure light and the light shielding film 3 formed on on the translucent film 2, the top layer part of the light shielding film 3 is formed as a reflectance adjustment part 3a comprising chromium, carbon, oxygen, and nitrogen and the wavelength dependence of reflectance of the entire light shielding film 3 is adjusted according to the nitrogen content of the reflectance adjusting part 3a. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
