Magnesium based gettering regions for gallium and nitrogen containing laser diode devices

摘要

In an example, the present invention provides a gallium and nitrogen containing laser diode device. The device has a gallium and nitrogen containing substrate material comprising a surface region, which is configured on either a non-polar ({10-10}) crystal orientation or a semi-polar ({10-10} crystal orientation configured with an offcut at an angle toward or away from the [0001] direction). The device also has a GaN region formed overlying the surface region, an active region formed overlying the surface region, and a gettering region comprising a magnesium species overlying the surface region. The device has a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region.

主权项

1. A gallium and nitrogen containing laser diode device, the device comprising:
a gallium and nitrogen containing material comprising a surface region, the surface region being configured on either a non-polar {10-10} crystal orientation or a semi-polar crystal orientation configured with an orientation of {10-10} with an offcut at an angle toward or away from the [0001] direction; a gallium and nitrogen containing region formed overlying the surface region; an active region formed overlying the surface region; a gettering region comprising a magnesium species overlying the surface region; and a p-type cladding region comprising an (InAl)GaN material doped with a plurality of magnesium species formed overlying the active region; whereupon the gettering region is provided at a temperature of less than about 900° C.