发明名称 |
CHARGED PARTICLE BEAM PROJECTING EXPOSURE DEVICE, MASK FOR EXPOSURE, METHOD OF MANUFACTURING MASK FOR EXPOSURE, AND CHARGED PARTICLE BEAM PROJECTING EXPOSURE SYSTEM |
摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a charged particle beam projecting exposure device that uses a mask and can suppress the expansion of a charged particle beam caused by the repulsion of charged particles to each other due to a Coulomb force by improving the mechanical strength of a stencil mask, and at the same time, reducing the number of openings of the mask. <P>SOLUTION: The charged particle beam projecting exposure device 100 and the stencil mask 6 manufactured by narrowing a mask pattern used for exposure are used. When the exposure device 100 performs exposure by using the stencil mask 6, the line width of a pattern transferred to the wafer 9 is thickened by moving an electronic beam 2 with respect to a wafer 9 by changing the electron optics-based condition of the electron beam 2 and the position of the stencil mask 6 or the wafer 9. Consequently, the opening area of the stencil mask 6 can be reduced. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
申请公布号 |
JP2005101292(A) |
申请公布日期 |
2005.04.14 |
申请号 |
JP20030333343 |
申请日期 |
2003.09.25 |
申请人 |
SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC |
发明人 |
KOIKE KAORU |
分类号 |
G03F1/20;G03F7/20;H01L21/027;(IPC1-7):H01L21/027;G03F1/16 |
主分类号 |
G03F1/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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