发明名称 |
Method for manufacturing magnetoresistive device |
摘要 |
The present invention provides a method for manufacturing a magnetoresistive effect device which can improve the through-put and achieve a high MR ratio. A method for manufacturing a magnetoresistive device according to an embodiment of the present invention includes steps of: forming a first ferromagnetic layer; forming a tunnel barrier layer on the first ferromagnetic layer in a first chamber; and forming a second ferromagnetic layer on the tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes steps of: forming a metal layer on the first ferromagnetic layer; oxidizing the metal layer; and, before the step of forming the second ferromagnetic layer, reducing a pressure inside the first chamber to a predetermined pressure at which the metal layer vaporizes, while keeping a temperature inside the first chamber at a predetermined temperature. |
申请公布号 |
US9502644(B1) |
申请公布日期 |
2016.11.22 |
申请号 |
US201615196992 |
申请日期 |
2016.06.29 |
申请人 |
CANON ANELVA CORPORATION |
发明人 |
Nagamine Yoshinori;Saruya Takeshi |
分类号 |
H01L43/08;H01L43/12;H01L43/10;H01L43/02;G11B5/39;G01R33/09 |
主分类号 |
H01L43/08 |
代理机构 |
Fitzpatrick, Cella, Harper & Scinto |
代理人 |
Fitzpatrick, Cella, Harper & Scinto |
主权项 |
1. A method for manufacturing a magnetoresistive device, comprising steps of:
preparing a substrate on which a first ferromagnetic layer is formed; forming a tunnel barrier layer on the first ferromagnetic layer in a first chamber; and forming a second ferromagnetic layer on the tunnel barrier layer, wherein the step of forming the tunnel barrier layer includes steps of:
forming a metal layer on the first ferromagnetic layer;oxidizing the metal layer; andbefore the step of forming the second ferromagnetic layer, reducing a pressure inside the first chamber to a predetermined pressure at which the metal layer vaporizes, while keeping a temperature inside the first chamber at a predetermined temperature. |
地址 |
Kawasaki-Shi JP |