| 发明名称 |
CHEMICAL-MECHANICAL PLANARIZATION SYSTEM |
| 摘要 |
A chemical-mechanical planarization (CMP) system includes a platen, a pad, a polish head, a rotating mechanism, a light source, and a detector. The pad is disposed on the platen. The polish head is configured to hold a wafer against the pad. The rotating mechanism is configured to rotate at least one of the platen and the polish head. The light source is configured to provide incident light to an end-point layer on the wafer. The detector is configured to detect absorption of the incident light by the end-point layer. |
| 申请公布号 |
US2016332277(A1) |
申请公布日期 |
2016.11.17 |
| 申请号 |
US201615221187 |
申请日期 |
2016.07.27 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHENG Chung-Liang;CHEN Yen-Yu;LEE Chang-Sheng;ZHANG Wei |
| 分类号 |
B24B37/013;B24B49/12;H01L29/78;H01L21/66;H01L29/66;H01L21/3105 |
主分类号 |
B24B37/013 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A chemical-mechanical planarization (CMP) system comprising:
a platen; a pad disposed on the platen; a polish head configured to hold a wafer against the pad; a rotating mechanism configured to rotate at least one of the platen and the polish head; a light source configured to provide incident light to an end-point layer on the wafer; and a detector configured to detect absorption of the incident light by the end-point layer. |
| 地址 |
Hsinchu TW |
