发明名称 |
Method for plasma etching a wafer after backside grinding |
摘要 |
A method for plasma etching a wafer after a backside grinding process which incorporates an oxidation pretreatment step is disclosed. The method includes the step of first grinding a backside of a wafer to expose a bare silicon surface. The bare silicon surface is then oxidized in an oxidation chamber to form a substantially uniform silicon oxide layer of at least 50 Å thick, and preferably at least 100 Å thick. The wafer is then positioned in a plasma etch chamber with an active surface of the wafer exposed, and a surface layer etched away by an oxygen plasma without causing any further silicon oxide formation on the backside of the wafer. The present invention novel plasma etching method can be advantageously used for removing an organic material layer, such as a photoresist layer from a wafer surface.
|
申请公布号 |
US6887793(B2) |
申请公布日期 |
2005.05.03 |
申请号 |
US20020157683 |
申请日期 |
2002.05.29 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
CHANG FENG-RU;LU GAU-MING;CHANG YEONG-RONG |
分类号 |
H01L21/02;H01L21/30;H01L21/302;H01L21/46;H01L21/461;(IPC1-7):H01L21/302 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|