发明名称 |
Methods of forming capacitor constructions |
摘要 |
The invention includes a method of forming a semiconductor construction. A semiconductor substrate is provided, and a conductive node is formed to be supported by the semiconductor substrate. A first conductive material is formed over the conductive node and shaped as a container. The container has an opening extending therein and an upper surface proximate the opening. The container opening is at least partially filled with an insulative material. A second conductive material is formed over the at least partially filled container opening and physically against the upper surface of the container. The invention also includes semiconductor structures.
|
申请公布号 |
US6900106(B2) |
申请公布日期 |
2005.05.31 |
申请号 |
US20020094581 |
申请日期 |
2002.03.06 |
申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
BASCERI CEM;DERDERIAN GARO J. |
分类号 |
H01L21/02;H01L21/768;(IPC1-7):H01L21/20 |
主分类号 |
H01L21/02 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|