发明名称 |
Semiconductor device, method of making the same and liquid crystal display device |
摘要 |
To provide TFT of improved low-temperature polycrystalline layer that has higher electron mobility and assures less fluctuation in manufacture in view of realizing a liquid-crystal display device having a large display area by utilizing a glass substrate. A TFT having higher electron mobility can be realized within the predetermined range of characteristic fluctuation by utilizing the semiconductor thin-film (called quasi single crystal thin-film) formed of poly-crystal grain joined with the {111} twin-boundary of Diamond structure as the channel region (namely, active region) of TFT.
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申请公布号 |
US6903372(B1) |
申请公布日期 |
2005.06.07 |
申请号 |
US20000698274 |
申请日期 |
2000.10.30 |
申请人 |
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发明人 |
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分类号 |
G02F1/136;H01L21/336;H01L21/77;H01L21/84;H01L27/12;H01L29/04;H01L29/417;H01L29/786;(IPC1-7):H01L29/76 |
主分类号 |
G02F1/136 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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