SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

A semiconductor device with a structure in which an increase in the number of oxygen vacancies in an oxide semiconductor layer can be suppressed and a method for manufacturing the semiconductor device are provided. The semiconductor device includes an oxide insulating layer; intermediate layers apart from each other over the oxide insulating layer; a source electrode layer and a drain electrode layer over the intermediate layers; an oxide semiconductor layer that is electrically connected to the source electrode layer and the drain electrode layer and is in contact with the oxide insulating layer; a gate insulating film over the source electrode layer, the drain electrode layer, and the oxide semiconductor layer; and a gate electrode layer that is over the gate insulating film and overlaps with the source electrode layer, the drain electrode layer, and the oxide semiconductor layer.

主权项

1. A method for manufacturing a semiconductor device, comprising the steps of:
forming an oxide insulating layer over a substrate; forming a first intermediate layer and a second intermediate layer over the oxide insulating layer;
forming a source electrode layer over the first intermediate layer;forming a drain electrode layer over the second intermediate layer; forming an oxide semiconductor layer over the source electrode layer and the drain electrode layer; forming a gate insulating film over the oxide semiconductor layer; and forming a gate electrode layer over the gate insulating film,
wherein the first intermediate layer and the source electrode layer are stacked with each other, andwherein the second intermediate layer and the drain electrode layer are stacked with each other.