发明名称 |
LOW TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM AND METHOD OF PRODUCING THE SAME, ARRAY SUBSTRATE AND DISPLAY APPARATUS |
摘要 |
A method for producing a low temperature polycrystalline silicon thin film, comprising steps of: providing a substrate; forming a thermal conduction and electrical insulation layer, a buffer layer and an amorphous silicon layer on the substrate in this order; and performing a high-temperature treatment and a laser annealing on the amorphous silicon layer to convert the amorphous silicon layer to a polycrystalline silicon thin film, wherein the thermal conduction and electrical insulation layer comprises regular patterns distributed on the substrate. |
申请公布号 |
US2016351602(A1) |
申请公布日期 |
2016.12.01 |
申请号 |
US201615232641 |
申请日期 |
2016.08.09 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
Tian Xueyan;Long Chunping |
分类号 |
H01L27/12;H01L29/66;H01L29/786;H01L21/02 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
1. A method for producing a low temperature polycrystalline silicon thin film, comprising steps of:
providing a substrate; forming a thermal conduction and electrical insulation layer, a buffer layer and an amorphous silicon layer on the substrate in this order; and performing a high-temperature treatment and a laser annealing on the amorphous silicon layer to convert the amorphous silicon layer to a polycrystalline silicon thin film, wherein the thermal conduction and electrical insulation layer comprises regular patterns distributed on the substrate, wherein during the laser annealing, the amorphous silicon thin film is cooled more quickly in a first area with the patterns of the thermal conduction and electrical insulation layer than a second area without the patterns of the thermal conduction and electrical insulation layer. |
地址 |
Beijing CN |