| 发明名称 |
ASPECT RATIO FOR SEMICONDUCTOR ON INSULATOR |
| 摘要 |
A method comprises forming one or more fins in a first region on an insulated substrate. The method also comprises forming one or more fins formed in a second region on the insulated substrate. The insulated substrate comprising a silicon substrate, and an insulator layer deposited on the silicon substrate. The one or more fins in the first region comprising a first material layer deposited on the insulator layer. The one or more fins in the second region comprising a second material layer deposited on the insulator layer. |
| 申请公布号 |
US2016351592(A1) |
申请公布日期 |
2016.12.01 |
| 申请号 |
US201615227469 |
申请日期 |
2016.08.03 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Leobandung Effendi |
| 分类号 |
H01L27/12;H01L29/20;H01L21/311;H01L21/308;H01L21/84;H01L29/165;H01L29/06 |
主分类号 |
H01L27/12 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor structure, comprising:
a first set of one or more fins formed in a first region on an insulated substrate; and a second set of one or more fins formed in a second region on the insulated substrate; wherein the insulated substrate comprises:
a silicon substrate; andan insulator layer deposited on the silicon substrate; wherein the a first set of one or more fins in the first region comprises a first material layer deposited on the insulator layer; and wherein the second set of one or more fins in the second region comprises a second material layer deposited on the insulator layer. |
| 地址 |
Armonk NY US |
