FERROELECTRIC RANDOM-ACCESS MEMORY WITH PRE-PATTERNED OXYGEN BARRIER

摘要

Structure of F-RAM cells are described. The F-RAM cell include a contact extending through a first dielectric layer on a surface of a substrate. A barrier structure is formed over the contact by depositing and patterning a barrier layer. A second dielectric layer is deposited over the patterned barrier layer and planarized to expose a top surface of the barrier structure. A ferro-stack is deposited and patterned over the barrier structure to form a ferroelectric capacitor. A bottom electrode of the ferroelectric capacitor is electrically coupled to the diffusion region of the MOS transistor through the barrier structure. The barrier layer is conductive so that a bottom electrode of the ferroelectric capacitor is electrically coupled to the contact through the barrier structure. In one embodiment, patterning barrier layer comprises concurrently forming a local interconnect (LI) on a top surface of the first dielectric layer.

主权项

1. A memory device, comprising:
a barrier layer disposed over a contact and a first dielectric, the barrier layer comprising a pre-patterned barrier structure that is electrically conductive, wherein the pre-patterned barrier structure is formed by a first patterning, disposed over the contact and includes a first length; and a patterned ferro-stack including a second length disposed at least partially over the pre-patterned barrier structure, wherein the patterned ferro-stack is formed by a second patterning and coupled electrically to the contact via the pre-patterned barrier structure, wherein the first patterning of the pre-patterned barrier structure and the second patterning of the patterned ferro-stack are performed separately.