| 主权项 |
1. A reverse conducting IGBT comprising:
a semiconductor substrate partitioned into an IGBT region in which an IGBT structure is provided and a diode region in which a diode structure is provided; a bottom surface electrode in contact with a bottom surface of the semiconductor substrate, the bottom surface electrode being in contact with both the IGBT region and the diode region of the semiconductor substrate; a top surface electrode in contact with a top surface of the semiconductor substrate, the top surface electrode being in contact with both the IGBT region and the diode region of the semiconductor substrate; a trench gate member provided in the IGBT region of the semiconductor substrate, having a lattice-pattern layout when seen from a direction orthogonal to the top surface of the semiconductor substrate; and a trench member provided in the diode region of the semiconductor substrate, having a stripe-pattern layout when seen from the direction orthogonal to the top surface of the semiconductor substrate, wherein the trench member comprises a plurality of stripe trenches extending along a first direction, the diode region of the semiconductor substrate comprises:
an anode region of a first conductive type that is provided between adjacent stripe trenches, is exposed at the top surface of the semiconductor substrate, and is in contact with the top surface electrode;a drill region of a second conductive type that is provided beneath the anode region;a barrier region of the second conductive type that is provided between adjacent stripe trenches, is provided between the anode region and the drift region, has an impurity concentration which is higher than an impurity concentration of the drift region, and is electrically connected to the top surface electrode via a pillar member that extends from the top surface of the semiconductor substrate. |
