发明名称 |
PROCEDE D'OBTENTION CONCOMITANTE D'AU MOINS UNE PAIRE DE STRUCTURES COMPRENANT AU MOINS UNE COUCHE UTILE REPORTEE SUR UN SUBSTRAT |
摘要 |
<p>A method for producing a semiconductor structure that includes at least one useful layer on a substrate. This method includes providing a source substrate with a zone of weakness therein that defines a relatively thick useful layer between the zone of weakness and a front face of the source substrate; bonding the front face of the source substrate to a support substrate and detaching the useful layer from the source substrate at the zone of weakness to transfer the useful layer to the support substrate; implanting atomic species into a free face of the useful layer to a controlled mean implantation depth therein to form a zone of weakness within the useful layer that defines front and rear useful layers, with the rear useful layer contacting the source substrate and the front useful layer containing a greater concentration of defects; bonding a stiffening substrate to the free face of the front useful layer after implantation of the atomic species; and detaching the front useful layer from the rear useful layer along the zone of weakness to form a semiconductor structure comprising the support substrate and the rear useful layer thereon. The structures obtained can be used in the fields of electronics, optoelectronics or optics.</p> |
申请公布号 |
FR2855909(B1) |
申请公布日期 |
2005.08.26 |
申请号 |
FR20030006845 |
申请日期 |
2003.06.06 |
申请人 |
S.O.I.TEC SILICON ON INSULATOR TECHNOLOGIES;COMMISSARIAT A L'ENERGIE ATOMIQUE |
发明人 |
GHYSELEN BRUNO;AULNETTE CECILE;BATAILLOU BENOIT;MAZURE CARLOS;MORICEAU HUBERT |
分类号 |
H01L21/762;(IPC1-7):H01L21/302;H01L21/20 |
主分类号 |
H01L21/762 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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