| 摘要 |
PROBLEM TO BE SOLVED: To provide a gallium nitride-based film having high orientation and crystallinity, and produced by a sputtering method using a gallium nitride-based target, and to provide a production method of the film.SOLUTION: A gallium nitride-based film suitable for an element or the like is produced by using a sputtering method in which a gallium nitride sintered body having a reduced oxygen content is used for a sputtering target as a main component, and by optimizing a deposition condition.SELECTED DRAWING: None |
