| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor device provided with wiring for which a leakage current among the wiring is reduced and TDDB characteristics are improved. <P>SOLUTION: The semiconductor device comprises an inter-layer insulation film 108, and the wiring 160 provided with a copper film 124 embedded in a groove formed on the inter-layer insulation film, whose film thickness is thinner than the depth of the groove and main material is copper, and a low expansion metal film 140 formed on the copper film, whose thermal expansion coefficient is smaller than the one of the copper film. <P>COPYRIGHT: (C)2005,JPO&NCIPI</p> |
