| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor element capable of enhancing the light confinement effect of a silicon semiconductor, without making the process complicated. <P>SOLUTION: The manufacturing method of the semiconductor element includes the steps of dissolving silver to an electrolyte containing hydrogen fluoride; and contacting an n-type single crystal silicon substrate 1 with the electrolyte, into which silver is dissolved to form a rugged shape 1a onto the surface of the n-type single crystal silicon substrate 1 without the need for power application. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
