发明名称 Manufacturing apparatus and manufacturing method of semiconductor device
摘要 A load lock chamber ( 12 ) is connected in a front stage of a film forming chamber ( 11 ) through a damper and the like. A pipe to which a N<SUB>2 </SUB>gas and aeriform or fog-like H<SUB>2</SUB>O are supplied is connected to the load lock chamber ( 12 ). The pipe is led from a vaporizer ( 13 ). Inside the load lock chamber ( 12 ), a carrying section 15 on which a wafer ( 20 ) is placed is provided, whereas outside the load lock chamber ( 12 ), a cooler ( 14 ) cooling a carrying section ( 15 ) by means of liquid nitrogen is arranged. The temperature of the carrying section 15 is held at, for example, -4° C.
申请公布号 US2005241932(A1) 申请公布日期 2005.11.03
申请号 US20050089538 申请日期 2005.03.25
申请人 MIURA KAZUTAKA;NODA SHOZO 发明人 MIURA KAZUTAKA;NODA SHOZO
分类号 C23C14/00;C23C14/32;C23C14/34;C23C14/56;G06F1/16;G06F3/16;H01L21/203;H01L21/285;H01L21/768;H04R1/06;(IPC1-7):C23C14/32 主分类号 C23C14/00
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