发明名称 |
Ceramic thin film on various substrates, and process for producing same |
摘要 |
The process of Polymer Assisted Chemical Vapor Deposition (PACVD) and the semiconductor, dielectric, passivating or protecting thin films produced by the process are described. A semiconductor thin film of amorphous silicon carbide is obtained through vapor deposition following desublimation of pyrolysis products of polymeric precursors in inert or active atmosphere. PA-CVD allows one or multi-layers compositions, microstructures and thicknesses to be deposited on a wide variety of substrates. The deposited thin film from desublimation is an n-type semiconductor with a low donor concentration in the range of 10<SUP>14</SUP>-10<SUP>17 </SUP>cm<SUP>-3</SUP>. Many devices can be fabricated by the PA-CVD method of the invention such as; solar cells; light-emitting diodes; transistors; photothyristors, as well as integrated monolithic devices on a single chip. Using this novel technique, high deposition rates can be obtained from chemically synchronized Si-C bonds redistribution in organo-polysilanes in the temperature range of about 200-450° C.
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申请公布号 |
US2005241567(A1) |
申请公布日期 |
2005.11.03 |
申请号 |
US20050515450 |
申请日期 |
2005.06.24 |
申请人 |
SCARLETE MIHAI;AKTIK CETIN |
发明人 |
SCARLETE MIHAI;AKTIK CETIN |
分类号 |
C23C16/32;C23C16/46;(IPC1-7):C30B1/00;C30B5/00 |
主分类号 |
C23C16/32 |
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