发明名称 |
Method for making an ultra thin FDSOI device with improved short-channel performance |
摘要 |
A method for forming a FDSOI device with channel length less than 50 nm with good short channel control. The gate has a tapered polysilicon spacer and a dielectric spacer. A polysilicon gate feature is formed and dielectric sidewall spacers are formed thereon. The polysilicon gate feature is then etched to form tapered poly features separated by a gap. A gate dielectric is deposited at low temperature, then metal is deposited into the gap to form the metal gate.
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申请公布号 |
US6975014(B1) |
申请公布日期 |
2005.12.13 |
申请号 |
US20010826634 |
申请日期 |
2001.04.05 |
申请人 |
ADVANCED MICRO DEVICES, INC. |
发明人 |
KRIVOKAPIC ZORAN;CHERIAN SUNNY;HOLBROOK ALLISON |
分类号 |
H01L21/336;H01L29/00;H01L29/423;H01L29/786;(IPC1-7):H01L29/00 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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