发明名称 |
Method of forming narrow trenches in semiconductor substrates |
摘要 |
A method of forming a trench within a semiconductor substrate. The method comprises, for example, the following: (a) providing a semiconductor substrate; (b) providing a patterned first CVD-deposited masking material layer having a first aperture over the semiconductor substrate; (c) depositing a second CVD-deposited masking material layer over the first masking material layer; (d) etching the second masking material layer until a second aperture that is narrower than the first aperture is created in the second masking material within the first aperture; and (e) etching the semiconductor substrate through the second aperture such that a trench is formed in the semiconductor substrate. In preferred embodiments, the method of the present invention is used in the formation of trench MOSFET devices.
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申请公布号 |
US6977203(B2) |
申请公布日期 |
2005.12.20 |
申请号 |
US20010010162 |
申请日期 |
2001.11.20 |
申请人 |
GENERAL SEMICONDUCTOR, INC. |
发明人 |
HSHIEH FWU-IUAN;SO KOON CHONG;AMATO JOHN E.;PRATT BRIAN D. |
分类号 |
H01L21/28;H01L21/3065;H01L21/308;H01L21/336;H01L21/8234;H01L27/088;H01L29/12;H01L29/423;H01L29/49;H01L29/78;(IPC1-7):H01L21/336;H01L21/823;H01L21/320;H01L21/311 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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