| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory, wherein memory elements can be miniaturized for non-volatively holding information. <P>SOLUTION: The source region 142A, the drain region 142B, and the channel region 142C are formed on an active region 125B as element regions to operate as a transistor. A floating gate 125A is so formed that it faces the channel region 142C via a gate insulating film 124B. Further, a control gate 123 is so formed that it faces the floating gate 125A via an interlayer insulating film 124A. Compared to a bulk transistor, a thin film transistor T4 does not require an element isolation region; such as a well region or a field oxide film so that, the thin-film transistor T4 can be formed very small and with ease. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
