摘要 |
An electronic device is provided using wiring comprising aluminum to prevent hillock or whisker from generating, wherein the wiring contains oxygen atoms at a concentration of 8x10<SUP>18 </SUP>atoms.cm<SUP>-3 </SUP>or less, carbon atoms at a concentration of 5x10<SUP>18 </SUP>atoms.cm<SUP>-3 </SUP>or less, and nitrogen atoms at a concentration of 7x10<SUP>17 </SUP>atoms.cm<SUP>-3 </SUP>or less; furthermore, a silicon nitride film is formed on the aluminum gate, and an anodic oxide film is formed on the side planes thereof.
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