发明名称 Semiconductor device and manufacturing method thereof
摘要 A plurality of first wiring structures of a first width are arranged periodically at first intervals. A second wiring structure is formed next to one of the first wiring structures. The lower part of the second wiring structure has a second width substantially equal to the sum of n times the first width of the first wiring structure (n is a positive integer equal to two or more) and (n-1) times the first interval.
申请公布号 US6979860(B2) 申请公布日期 2005.12.27
申请号 US20030633230 申请日期 2003.08.04
申请人 发明人
分类号 H01L21/28;H01L21/3213;H01L21/8247;H01L27/10;H01L27/115;H01L29/423;H01L29/49;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 主分类号 H01L21/28
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