发明名称 |
Semiconductor device and manufacturing method thereof |
摘要 |
A plurality of first wiring structures of a first width are arranged periodically at first intervals. A second wiring structure is formed next to one of the first wiring structures. The lower part of the second wiring structure has a second width substantially equal to the sum of n times the first width of the first wiring structure (n is a positive integer equal to two or more) and (n-1) times the first interval.
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申请公布号 |
US6979860(B2) |
申请公布日期 |
2005.12.27 |
申请号 |
US20030633230 |
申请日期 |
2003.08.04 |
申请人 |
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发明人 |
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分类号 |
H01L21/28;H01L21/3213;H01L21/8247;H01L27/10;H01L27/115;H01L29/423;H01L29/49;H01L29/788;H01L29/792;(IPC1-7):H01L29/788 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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