发明名称 |
Reduced surface field technique for semiconductor devices |
摘要 |
A power device and a method for manufacturing the same are provided. The power device comprises a first conductive semiconductor substrate; a second conductive buried layer formed to a certain depth within the semiconductor substrate; a second conductive epitaxial layer formed on the conductive buried layer; a first conductive well formed within the conductive epitaxial layer; a second conductive well formed within the second conductive epitaxial layer, on both sides of the first conductive well; a second conductive drift region formed in predetermined portions on the first and the second conductive well; and a lateral double diffused MOS transistor formed in the second conductive drift region. The breakdown voltage of the power device is controlled according to a distance between the first conductive well and the second conductive buried layer.
|
申请公布号 |
US6979875(B2) |
申请公布日期 |
2005.12.27 |
申请号 |
US20030447558 |
申请日期 |
2003.05.28 |
申请人 |
FAIRCHILD KOREA SEMICONDUCTOR LTD. |
发明人 |
KWON TAE-HUN;KIM CHOEL-JOONG;LEE SUK-KYUN |
分类号 |
H01L21/336;H01L23/58;H01L27/088;H01L29/06;H01L29/08;H01L29/10;H01L29/78;(IPC1-7):H01L23/58 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|