| 摘要 |
A high voltage MOS transistor is provided that is compatible with low-voltage, sub-micron CMOS and BiCMOS processes. The high voltage transistor of the present invention has dopants that are implanted into the substrate prior to formation of the epitaxial layer. The implanted dopants diffuse into the epitaxial layer from the substrate during the formation of the epitaxial layer and subsequent heating steps. The implanted dopants increase the doping concentration in a lower portion of the epitaxial layer. The implanted dopants may diffuse father into the epitaxial layer than dopants in the buried layer forming an up-retro well that prevents vertical punch-through at high operating voltages for thin epitaxial layers. Particularly, a P-type dopant may diffuse farther up into an epitaxial layer than an N-type dopant to form an up-retro well.
|
