发明名称 NONVOLATILE MEMORY AND ITS PROGRAMMING METHOD
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a method for programming a nonvolatile memory having at least one memory block with memory cells located at the intersections of rows and columns. <P>SOLUTION: This method comprises a step in which an address for selecting a row is inputted and the inputted address is latched, a step in which a step of receiving the address for selecting the row until all selected row addresses are inputted and latched is repeated, and a step in which the row of the latched address is activated simultaneously. When the row of the latched address is activated simultaneously, the memory cells of the activated row belonging to each of the first columns are programmed simultaneously to the same data value. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006031920(A) 申请公布日期 2006.02.02
申请号 JP20050203503 申请日期 2005.07.12
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 KIM JIN-KOOK;JO SEONG-KUE
分类号 G11C16/02;G11C16/04;G11C16/06 主分类号 G11C16/02
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