| 摘要 |
PROBLEM TO BE SOLVED: To provide a silver island anti-fuse where a power consumption decrease and which can obtain a non-volatile memory device of a large capacity at low price. SOLUTION: The silver island anti-fuse (100) includes a first conductor (102), an electric resistance material (104) contacted with the first conductor (102), and at least one silver island (108) which is located on the electric resistance material (104) on the side opposite to the first conductor (102). A second conductor (106) located on the silver island (108) makes the silver island (108) closely contact with the electric resistance material (104). When a critical potential is applied to both ends of the silver island anti-fuse (100), a metal filament (300) passing through the electric resistance material (104) lowers from the silver island (108B), and a short circuit develops the silver island anti-fuse (100) changes from a high resistance to a low resistance. COPYRIGHT: (C)2006,JPO&NCIPI |
