| 摘要 |
A semiconductor memory device, comprising a memory array including a plurality of memory cells capable of storing data of at least 1 bit, includes a data write control section for controlling a data write operation to the plurality of memory cells; an address signal generation section for generating an address signal which represents an address of a prescribed memory cell; a determination section for determining whether or not to write data to the prescribed memory cell and outputting a first write signal; a data register section for storing data represented by the first write signal and outputting a second write signal; and a data write section for writing data to the prescribed memory cell based on the second write signal. The data register section stores the data based on a control signal which is output by the data write control section. <IMAGE> |
