| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a semiconductor memory device which can reduce the variations in the reference signals used to detect the data in the memory cells. <P>SOLUTION: The semiconductor memory device 100 has a memory cell MC to store data by accumulating or discharging electric charges, a memory cell array MCAL having two or more memory cells arranged in a matrix, two or more word lines WIL respectively connected to the memory cells arranged in each line of the memory, two or more bit lines BLL respectively connected to memory cells arranged in each line of the memory cell array, two or more dummy cells DCL arranged in the row direction of the memory cell array and respectively connected to each bit line, sense amplifiers SA to detect the data in the memory cells by using the averaged electrical properties of the dummy cells storing the data different from one another as the reference signal, and two or more switching elements SWAL to electrically connect four or more bit lines. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
