发明名称 FUSE REGION OF SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME
摘要 <p>A fuse region of a semiconductor device includes a moistureproof layer and a moistureproof dam. The fuse region includes lower interconnections disposed on a semiconductor substrate that are spaced from each other. A moistureproof layer is disposed above the lower interconnections. At least one fuse is disposed above the moistureproof layer. Fuse plugs which pass through the moistureproof layer and electrically connect the fuse with the lower interconnections are provided. A moistureproof dam which encloses four sides of the fuse region. The moistureproof dam contacts the moistureproof layer and extends in an upward direction from the moistureproof layer to serve as a moisture barrier for the fuse region. A method of fabricating a fuse region is also provided.</p>
申请公布号 KR100607202(B1) 申请公布日期 2006.07.24
申请号 KR20050008185 申请日期 2005.01.28
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 LEE, WON CHUL
分类号 H01L21/82 主分类号 H01L21/82
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