发明名称 |
PLASMA CVD APPARATUS AND PLASMA SURFACE TREATMENT METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which produces an electrode having excellent electron emission characteristics. <P>SOLUTION: A substrate 1 is mounted on a mount surface of an anode 11a in a chamber 10. A flow path 13a is formed in a cathode 13 facing the anode, and cooling water is circulated therethrough. A voltage is applied across the anode 11a and the cathode 13 to form a layer of carbon nanowall on the substrate 1 by plasma, and thereafter the anode 11a is cooled by a cooling member 12 to rapidly cool the substrate 1 to a predetermined temperature. <P>COPYRIGHT: (C)2007,JPO&INPIT |
申请公布号 |
JP2007119908(A) |
申请公布日期 |
2007.05.17 |
申请号 |
JP20060247972 |
申请日期 |
2006.09.13 |
申请人 |
KOCHI PREFECTURE SANGYO SHINKO CENTER;CASIO COMPUT CO LTD |
发明人 |
NISHIMURA KAZUHITO;SASAOKA HIDENORI |
分类号 |
C23C16/44;C01B31/02;C01B31/06;C23C16/26;C23C16/46;C23C16/509;H01J9/02;H01L21/31;H01L21/314;H05H1/24 |
主分类号 |
C23C16/44 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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