发明名称 PLASMA CVD APPARATUS AND PLASMA SURFACE TREATMENT METHOD
摘要 <P>PROBLEM TO BE SOLVED: To provide a plasma CVD apparatus which produces an electrode having excellent electron emission characteristics. <P>SOLUTION: A substrate 1 is mounted on a mount surface of an anode 11a in a chamber 10. A flow path 13a is formed in a cathode 13 facing the anode, and cooling water is circulated therethrough. A voltage is applied across the anode 11a and the cathode 13 to form a layer of carbon nanowall on the substrate 1 by plasma, and thereafter the anode 11a is cooled by a cooling member 12 to rapidly cool the substrate 1 to a predetermined temperature. <P>COPYRIGHT: (C)2007,JPO&INPIT
申请公布号 JP2007119908(A) 申请公布日期 2007.05.17
申请号 JP20060247972 申请日期 2006.09.13
申请人 KOCHI PREFECTURE SANGYO SHINKO CENTER;CASIO COMPUT CO LTD 发明人 NISHIMURA KAZUHITO;SASAOKA HIDENORI
分类号 C23C16/44;C01B31/02;C01B31/06;C23C16/26;C23C16/46;C23C16/509;H01J9/02;H01L21/31;H01L21/314;H05H1/24 主分类号 C23C16/44
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