METAL POLISHING COMPOSITION, AND POLISHING METHOD USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a metal polishing composition which has an excellent polishing speed to a conductor film composed of copper or a copper alloy and is capable of suppressing the occurrence of dishing, and to provide a polishing method using the same. SOLUTION: The metal polishing composition which contains respective components as follows and is used for chemical-mechanical polishing in the manufacture process of a semiconductor device and the polishing method using the same are provided: (1) peroxodisulfate; (2A) an anion surface active agent having at least one sulfo group or its salt in a molecule; (2B) an anion surface active agent having at least one carboxyl group or its salt in the molecule; and (3) a heteroaromatic ring compound. COPYRIGHT: (C)2009,JPO&INPIT