| 摘要 |
PURPOSE: A method for manufacturing a CMOS image sensor is provided to prevent a problem due to contrast difference by automatically passing a little light through a bright part according to the intensity of incident light by ion-implanting Ag halogen to a micro lens. CONSTITUTION: An epitaxial layer(1) is formed on a semiconductor substrate. A photodiode(2) is formed inside the epitaxial layer. A device(3) for processing a signal is formed after forming a pixel comprised of the photodiode. A passivation layer(4) is formed on the device. A color filter(5) is formed on the passivation layer. A planarization layer(6) is formed on the color filter. A micro lens(7) is formed on the planarization layer.
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