发明名称 Methods of forming different FinFET devices with different threshold voltages and integrated circuit products containing such devices
摘要 One illustrative method disclosed herein involves forming a first fin for a first FinFET device in and above a semiconducting substrate, wherein the first fin is comprised of a first semiconductor material that is different from the material of the semiconducting substrate and, after forming the first fin, forming a second fin for a second FinFET device that is formed in and above the semiconducting substrate, wherein the second fin is comprised of a second semiconductor material that is different from the material of the semiconducting substrate and different from the first semiconductor material.
申请公布号 US9564367(B2) 申请公布日期 2017.02.07
申请号 US201213613508 申请日期 2012.09.13
申请人 GLOBALFOUNDRIES Inc. 发明人 Jacob Ajey P.;Maszara Witold P.;Akarvardar Kerem
分类号 H01L21/8234;H01L21/8252;H01L21/8258;H01L27/088;H01L29/66;H01L29/78;H01L29/10 主分类号 H01L21/8234
代理机构 Amerson Law Firm, PLLC 代理人 Amerson Law Firm, PLLC
主权项 1. A method of forming first and second FinFET devices in and above a semiconducting substrate, comprising: forming a first patterned mask layer above said substrate that exposes a first region of said substrate where said first FinFET device will be formed and masks a second region of said substrate where said second FinFET device will be formed; with said first patterned mask layer in position, forming a first fin for said first FinFET device, wherein said first fin is comprised of a first semiconductor material that is different from the material of said semiconducting substrate; removing said first patterned masking layer; after removing said first patterned masking layer, forming a second patterned masking layer that masks said first region of said substrate and exposes said second region of said substrate where said second FinFET device will be formed; and after forming said first fin, and with said second patterned masking layer in position, forming a second fin for said second FinFET device, wherein said second fin is comprised of a second semiconductor material that is (a) in contact with said material of said semiconducting substrate, (b) different from the material of said semiconducting substrate and (c) different from said first semiconductor material.
地址 Grand Cayman KY