Method of forming semiconductor device using etch stop layer

摘要

A semiconductor device and method of formation are provided. A semiconductor device includes a first material comprising STI adjacent a fin. The STI is substantially uniform, such that a top surface of the STI has few to no defects and little to no concavity. To form the STI, the first material is implanted with a dopant, which forms an etch stop layer, such that the first material height is reduced by etching rather than CMP. Etching results in a better uniformity of the first material than CMP. STI that is substantially uniform comprises a better current barrier between adjacent fins than a device that comprises STI that is not substantially uniform.

主权项

1. A method of forming a semiconductor device comprising:
forming a hard mask over a semiconductor structure; forming a dielectric material over the hard mask and in a trench adjacent a sidewall of the hard mask; and implanting a dopant into a first portion of the hard mask and a first portion of the dielectric material, wherein an etch stop layer is formed from the dopant and the first portion of the dielectric material, a second portion of the dielectric material is over the etch stop layer and a third portion of the dielectric material is under the etch stop layer.