Method of manufacturing semiconductor device

摘要

A method of manufacturing a semiconductor device includes forming a plurality of active fins over a semiconductor substrate, sequentially forming first and second hard mask layers over the active fins, forming a first hard mask pattern by etching the second hard mask layer, trimming the first hard mask pattern to form a trimmed hard mask pattern, forming a first photo resist pattern over the first hard mask layer, forming second hard mask patterns by etching the first hard mask layer by using the trimmed hard mask pattern and the first photo resist pattern as an etching mask, and forming active fin patterns by etching the active fins by using the second hard mask patterns as an etching mask.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
forming a plurality of active fins over a semiconductor substrate; sequentially forming a first hard mask layer and a second hard mask layer over the active fins; etching the second hard mask layer to form a second hard mask pattern; trimming the second hard mask pattern to form a trimmed hard mask pattern; forming a first photo resist pattern over the first hard mask layer; etching the first hard mask layer by using the trimmed hard mask pattern and the first photo resist pattern as an etching mask to form first hard mask patterns; and etching the active fins by using the first hard mask patterns as an etching mask to form active fin patterns.