Method for forming line end space structure using trimmed photo resist

摘要

One or more techniques or systems for forming a line end space structure are provided herein. In some embodiments, a first patterned second hard mask (HM) region is formed above a first HM region. Additionally, at least some of the first patterned second HM region is removed. In some embodiments, a first sacrificial HM region and a second sacrificial HM region are formed above at least one of the first patterned second HM region or the first HM region. Photo resist (PR) is patterned above the second sacrificial HM region, and a spacer region is deposited above the patterned PR and second sacrificial HM region. In some embodiments, at least some of at least one of the spacer region, the PR, or the respective sacrificial HMs is removed. In this way, a line end space structure associated with an end-to-end space is formed.

主权项

1. A method, comprising:
patterning a hard mask (HM) region to form a patterned HM region above a base region; forming a trim photo resist (PR) region above the patterned HM region; forming a window within the trim PR region to expose a portion of the patterned HM region; and removing the portion of the patterned HM region exposed through the window.