Method, apparatus and system for responding to a row hammer event

摘要

Techniques and mechanisms to facilitate an operational mode of a memory device to prepare for a targeted refresh of a row in memory. In an embodiment, the memory device performs one or more operations while in the mode to prepare for a future command from a memory controller, the command to implement, at least in part, a targeted refresh of a row in a first bank of the memory device. Prior to such a command, the memory device services another command from the memory controller. In another embodiment, servicing the other command includes the memory device accessing a second bank of the memory device while the memory device operates in the mode, and before completion of an expected future targeted row refresh.

主权项

1. A dynamic random access memory (DRAM) device, comprising:
a bank group, including a target row; a mode register to store one or more configuration bits to control entry into a targeted row refresh (TRR) mode in response to receipt of a mode register set (MRS) command; and access logic to receive one or more commands from an associated memory controller, the one or more commands including
a first Activation command to be received when in the TRR mode, the first Activation command directed to the bank group including the target row;a first Precharge command corresponding to the first Activation command to be received at least a delay of (1.5*tRAS) after the first Activation command, wherein tRAS is a row active timing parameter; andtwo additional Activation commands and corresponding additional Precharge commands, wherein the one or more commands are to refresh at least one victim row physically proximate to the target row.