Magnetoresistance effect element and magnetic memory

摘要

Provided are a magneto resistive effect element with a stable magnetization direction perpendicular to a film plane and with a controlled magnetoresistance ratio, and a magnetic memory using the magneto resistive effect element. Ferromagnetic layers 106 and 107 of the magneto resistive effect element are formed from a ferromagnetic material containing at least one type of 3d transition metal such that the magnetoresistance ratio is controlled, and the film thickness of the ferromagnetic layers is controlled on an atomic layer level such that the magnetization direction is changed from a direction in the film plane to a direction perpendicular to the film plane.

主权项

1. A magnetoresistive element comprising:
a first non-magnetic layer containing oxygen; a ferromagnetic layer having a bcc structure and containing Fe and B, disposed over the first non-magnetic layer, with an interfacial perpendicular magnetic anisotropy at an interface therebetween that results in a magnetization direction of the ferromagnetic layer oriented perpendicularly to the film plane so that the magnetoresistive element has a magnetoresistance ratio (MR) equal to or greater than 70%; and a second non-magnetic layer disposed over the ferromagnetic layer, the second non-magnetic layer containing a material with a spin-orbit interaction smaller than that of Pt.