发明名称 BAW RESONATOR HAVING LATERAL ENERGY CONFINEMENT AND METHODS OF FABRICATION THEREOF
摘要 Embodiments of a Bulk Acoustic Wave (BAW) resonator in which an outer region of the BAW resonator is engineered in such a manner that lateral leakage of mechanical energy from an active region of the BAW resonator is reduced, and methods of fabrication thereof, are disclosed. In some embodiments, a BAW resonator includes a piezoelectric layer, a first electrode on a first surface of the piezoelectric layer, a second electrode on a second surface of the piezoelectric layer opposite the first electrode, and a passivation layer on a surface of the second electrode opposite the piezoelectric layer, the passivation layer having a thickness (TPA). The BAW resonator also includes a material on the second surface of the piezoelectric layer adjacent to the second electrode in an outer region of the BAW resonator. The additional material has a thickness that is n times the thickness (TPA) of the passivation layer.
申请公布号 US2017054429(A1) 申请公布日期 2017.02.23
申请号 US201514876426 申请日期 2015.10.06
申请人 RF Micro Devices, Inc. 发明人 Fattinger Gernot;Tajic Alireza
分类号 H03H9/54;H03H9/17 主分类号 H03H9/54
代理机构 代理人
主权项 1. A Bulk Acoustic Wave (BAW) resonator, comprising: a piezoelectric layer; a first electrode on a first surface of the piezoelectric layer; a second electrode on a second surface of the piezoelectric layer opposite the first electrode on the first surface of the piezoelectric layer; a passivation layer on a surface of the second electrode opposite the piezoelectric layer within an active region of the BAW resonator, the passivation layer having a thickness (TPA) within the active region of the BAW resonator; and one or more material layers on the second surface of the piezoelectric layer adjacent to the second electrode in an outer region of the BAW resonator, the outer region of the BAW resonator being a region outside of the active region of the BAW resonator and the one or more material layers having a thickness that is n times the thickness (TPA) of the passivation layer, wherein n is a value other than 1.
地址 Greensboro NC US