| 发明名称 |
PIN diode with nanoclusters |
| 摘要 |
A diode for detecting the presence of radiation includes a P region, an N region, an intrinsic region located between the P region and the N region, and a layer of nanoclusters located adjacent to the intrinsic region. |
| 申请公布号 |
US9583665(B2) |
申请公布日期 |
2017.02.28 |
| 申请号 |
US201414476957 |
申请日期 |
2014.09.04 |
| 申请人 |
NXP USA, Inc. |
发明人 |
Kundalgurki Srivatsa G. |
| 分类号 |
H01L27/14;H01L31/00;H01L31/115;G01T3/08;H01L31/0216;H01L31/0232;H01L31/105 |
主分类号 |
H01L27/14 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A diode for detecting the presence of radiation comprising:
a P region; an N region; an intrinsic region located between the P region and the N region; a layer of nanoclusters located adjacent to the intrinsic region, wherein the nanoclusters are doped with a material that generates alpha particles upon interactions with neutrons. |
| 地址 |
Austin TX US |
