Device switching using layered device structure

摘要

A resistive switching device. The device includes a first electrode comprising a first metal material overlying the first dielectric material and a switching material comprising an amorphous silicon material. The device includes a second electrode comprising at least a second metal material. In a specific embodiment, the device includes a buffer material disposed between the first electrode and the switching material. The buffer material provides a blocking region between the switching material and the first electrode so that the blocking region is substantially free from metal particles from the second metal material when a first voltage is applied to the second electrode.

主权项

1. A device having a resistive switching device, comprising:
a semiconductor substrate; a plurality of CMOS devices formed upon the semiconductor substrate; an insulating layer disposed upon the plurality of the CMOS devices; and a resistive switching device disposed upon the insulating layer and coupled to at least a CMOS device of the plurality of CMOS devices, wherein the resistive switching device comprising:
a first wiring structure disposed upon the insulating layer comprising a first metal material;a buffer material disposed adjacent to and touching the first wiring structure;a non-stoichiometric switching material disposed adjacent to and touching the buffer material, wherein the non-stoichiometric switching material comprises a material having a plurality of non-stoichiometric defect sites;a second wiring structure disposed and touching the non-stoichiometric switching material having at least a portion comprising a second metal material having a plurality of metal particles;wherein at least some metal particles derived from the plurality of metal particles of the second wiring structure are removably disposed within non-stoichiometric defect sites from the plurality of non-stoichiometric defect sties; andwherein the buffer material completely separates the first wiring structure and the non-stoichiometric switching material, and wherein the buffer material is substantially free from metal particles from the second wiring structure.