发明名称 |
Semiconductor device |
摘要 |
A semiconductor device includes a semiconductor substrate having a first conductivity type, an epitaxial layer having a second conductivity type, an isolation area in the epitaxial layer to define an active area of the semiconductor substrate, a body area having a first conductivity type and a drift area having a second conductivity type adjacent to each other in the epitaxial layer, a LOCOS insulating layer in the drift area and surrounded by the drift area, a drain area adjacent to a side part of the LOCOS insulating layer and surrounded by the drift area, a body contact area and a source area in the body area and surrounded by the body area, and a gate area overlapping the drift area and a part of the LOCOS insulating layer from a direction of the body area. |
申请公布号 |
US9627492(B2) |
申请公布日期 |
2017.04.18 |
申请号 |
US201514964758 |
申请日期 |
2015.12.10 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
Kim Minhwan;Jung Jaehyun;Kim Jungkyung;Lee Kyuok;Jang Jaejune;Jeon Changki;Cho Suyeon;Ko Seonghoon;Cho Kyu-Heon |
分类号 |
H01L29/66;H01L29/40;H01L29/423;H01L29/78;H01L29/06 |
主分类号 |
H01L29/66 |
代理机构 |
Lee & Morse P.C. |
代理人 |
Lee & Morse P.C. |
主权项 |
1. A semiconductor device, comprising:
a semiconductor substrate having a first conductivity type; an epitaxial layer having a second conductivity type on the semiconductor substrate; an isolation area in the epitaxial layer to define an active area of the semiconductor substrate; a body area having a first conductivity type and a drift area having a second conductivity type, the body area and the drift area being adjacent to each other in the epitaxial layer; a local oxidation of silicon (LOCOS) insulating layer in the drift area, side and lower surfaces of the LOCOS insulating layer being surrounded by the drift area; a drain area adjacent to a side part of the LOCOS insulating layer, side and lower surfaces of the drain area being surrounded by the drift area; a body contact area and a source area in the body area, side and lower surfaces of the body contact area and the source area being surrounded by the body area; and a gate area overlapping the drift area and a part of the LOCOS insulating layer from a direction of the body are, wherein the gate area includes a plurality of bar shaped portions extending from the direction of the body area, the bar shaped portions being spaced apart from each other, and a portion of the LOCOS insulating layer being exposed between the spaced bar shaped portions. |
地址 |
Suwon-Si, Gyeonggi-Do KR |