Fin structure of semiconductor device

摘要

A semiconductor device and method of formation are provided herein. A semiconductor device includes a fin having a first wall extending along a first plane, the fin including a doped region defining a first furrow on a first side of the first plane. A dielectric is disposed within the first furrow, such that the dielectric is in contact with the first furrow between a first end of the dielectric and a second end of the dielectric. The first end is separated a first distance from the first plane. The dielectric disposed within the furrow increases the isolation of a channel portion of adjacent fins, and thus decreases current leakage of a FinFET, as compared to a FinFET including fins that do not include a dielectric disposed within a furrow.

主权项

1. A semiconductor device comprising:
a first fin on a substrate; oxide regions on opposing sidewalls of the first fin, the oxide regions extending toward each other such that a portion of the first fin between the oxide regions is narrower than a portion of the first fin above the oxide regions; a first shallow trench isolation (STI) region along a first sidewall of the opposing sidewalls, lowest portions of the oxide regions being higher than a topmost surface of the first STI region; and one or more liner layers interposed between the first fin and the first STI region, wherein the oxide regions contact the one or more liner layers.