| 发明名称 | Method for forming image-sensor device | ||
| 摘要 | A method for forming an image-sensor device is provided. The method includes providing a first semiconductor substrate having a first surface and a second surface opposite to the first surface. The method includes forming a device layer over the first surface of the first semiconductor substrate. The method includes bonding the first semiconductor substrate to a second semiconductor substrate after the formation of the device layer. The second surface faces the second semiconductor substrate. The method includes forming a diffusion layer between the first semiconductor substrate and the second semiconductor substrate. The diffusion layer has a dopant concentration gradient that increases in a direction from the first semiconductor substrate toward the second semiconductor substrate. | ||
| 申请公布号 | US9620556(B2) | 申请公布日期 | 2017.04.11 |
| 申请号 | US201514937372 | 申请日期 | 2015.11.10 |
| 申请人 | Taiwan Semiconductor Manufacturing Co., Ltd. | 发明人 | Tu Chien-Nan;Yeh Yu-Lung;Wu Ming-Hsien |
| 分类号 | H01L27/14;H01L27/146 | 主分类号 | H01L27/14 |
| 代理机构 | Birch, Stewart, Kolasch & Birch, LLP | 代理人 | Birch, Stewart, Kolasch & Birch, LLP |
| 主权项 | 1. A method for forming an image-sensor device, comprising: providing a first semiconductor substrate having a first surface and a second surface opposite to the first surface; forming a device layer over the first surface of the first semiconductor substrate; after the formation of the device layer, bonding the first semiconductor substrate to a second semiconductor substrate, wherein the second surface faces the second semiconductor substrate; and forming a diffusion layer between the first semiconductor substrate and the second semiconductor substrate, wherein the diffusion layer has a dopant concentration gradient that increases in a direction from the first semiconductor substrate toward the second semiconductor substrate. | ||
| 地址 | Hsinchu TW | ||