Methods of manufacturing semiconductor device

摘要

A method of manufacturing a semiconductor device is provided. The method includes forming a molding layer and a supporter layer on a semiconductor substrate, forming a multiple mask layer including a first mask layer and a second mask layer formed on the first mask layer, on the supporter layer. The first mask layer is formed of a material having an etch selectivity with respect to the molding layer and the second mask layer is formed of a material having an etch selectivity with respect to the supporter layer. The method includes forming a first mask pattern and a second mask pattern formed on the first mask pattern by patterning the multiple mask layer, etching the supporter layer by performing a first etching process using the second mask pattern as an etch mask, etching the molding layer, and forming a hole by performing a second etching process using the first mask pattern as an etch mask.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming a molding layer and a supporter layer on a semiconductor substrate; forming a multiple mask layer including a first mask layer and a second mask layer formed on the first mask layer, on the supporter layer, wherein the first mask layer comprises a first material having a first etch selectivity with respect to the molding layer, and wherein the second mask layer comprises a second material having a second etch selectivity with respect to the supporter layer; patterning the multiple mask layer to form a first mask pattern and a second mask pattern on the first mask pattern; performing a first etching process using the second mask pattern as an etch mask to etch the supporter layer; and performing a second etching process using the first mask pattern as an etch mask to etch the molding layer and form a hole, wherein the second mask pattern is etched and removed during the first etching process.