发明名称 Test system simultaneously testing semiconductor devices
摘要 Individual memory chips are simultaneously tested by a tester using selectively enabled stress modules that apply a corresponding stress test to memory cells, wherein each stress test is associated with a corresponding failure attribute for the memory cells. Built-in self-test (BIST)/built-in self-stress (BISS) circuitry is provided in each stress module and may configured to selectively apply one or more stress test(s) during the simultaneous testing of a plurality of memory chips.
申请公布号 US9620243(B2) 申请公布日期 2017.04.11
申请号 US201514731784 申请日期 2015.06.05
申请人 Samsung Electronics Co., Ltd. 发明人 Park Sunghun
分类号 G11C29/44;G11C17/16;G11C29/06;G11C29/26 主分类号 G11C29/44
代理机构 Volentine & Whitt, PLLC 代理人 Volentine & Whitt, PLLC
主权项 1. A test system comprising: a plurality of memory chips and a tester external to the plurality of memory chips and configured to generate a test mode register set (TMRS) signal, wherein the plurality of memory chips comprises a first memory chip and a second memory chip, the first memory chip includes a first memory cell array including memory cells susceptible to a first failure attribute, a first storage unit that stores first failure attribute information, and first built-in self-test (BIST)/built-in self-stress (BISS) circuitry, and the second memory chip includes a second memory cell array including memory cells susceptible to a second failure attribute different from the first failure attribute, a second storage unit that stores second failure attribute information, and second BIST/BISS circuitry, in response to the TMRS signal, the first storage unit provides the first failure attribute information to the tester and the second storage unit provides the second failure attribute information to the tester, and thereafter, the first BIST/BISS circuitry, the second BIST/BISS circuitry and tester are collectively configured in response to the first failure attribute information and second failure attribute information to simultaneously apply a first stress test associated with the first failure attribute to the first memory chip, and a second stress test associated with the second failure attribute and different from the first stress test to the second memory cell chip.
地址 Suwon-si, Gyeonggi-do KR