发明名称 |
Level compensation in multilevel memory |
摘要 |
Some embodiments include apparatuses and methods having a compensation unit to provide a compensation value based at least in part on a threshold voltage value of a memory cell. At least one of such embodiments includes a controller to select a code during an operation of retrieving information from the memory cell to represent a value of information stored in the memory cell. Such a code can be associated with an address having an address value based at least in part on the compensation value. Additional apparatuses and methods are described. |
申请公布号 |
US9620236(B2) |
申请公布日期 |
2017.04.11 |
申请号 |
US201514790438 |
申请日期 |
2015.07.02 |
申请人 |
Micron Technology, Inc. |
发明人 |
Moschiano Violante;Di Francesco Walter |
分类号 |
G11C16/10;G11C16/34;G11C11/56 |
主分类号 |
G11C16/10 |
代理机构 |
Schwegman Lundberg & Woessner, P.A. |
代理人 |
Schwegman Lundberg & Woessner, P.A. |
主权项 |
1. An apparatus comprising:
an input to receive digital information having a first set of values associated with a first threshold voltage value range of a memory cell and a second set of values associated with a second threshold voltage value range of the memory cell; a first storage component to store a first group of values based on a third set of values of the digital information, and to store a second group of values based on a fourth set of values of the digital information; and a second storage component to store a first compensation value based on a difference between a first value in the first set of values and a second value in the third set of values, and to store a second compensation value based on a difference between a third value in the second set of values and a fourth value in the fourth set of values. |
地址 |
Boise ID US |