发明名称 Level compensation in multilevel memory
摘要 Some embodiments include apparatuses and methods having a compensation unit to provide a compensation value based at least in part on a threshold voltage value of a memory cell. At least one of such embodiments includes a controller to select a code during an operation of retrieving information from the memory cell to represent a value of information stored in the memory cell. Such a code can be associated with an address having an address value based at least in part on the compensation value. Additional apparatuses and methods are described.
申请公布号 US9620236(B2) 申请公布日期 2017.04.11
申请号 US201514790438 申请日期 2015.07.02
申请人 Micron Technology, Inc. 发明人 Moschiano Violante;Di Francesco Walter
分类号 G11C16/10;G11C16/34;G11C11/56 主分类号 G11C16/10
代理机构 Schwegman Lundberg & Woessner, P.A. 代理人 Schwegman Lundberg & Woessner, P.A.
主权项 1. An apparatus comprising: an input to receive digital information having a first set of values associated with a first threshold voltage value range of a memory cell and a second set of values associated with a second threshold voltage value range of the memory cell; a first storage component to store a first group of values based on a third set of values of the digital information, and to store a second group of values based on a fourth set of values of the digital information; and a second storage component to store a first compensation value based on a difference between a first value in the first set of values and a second value in the third set of values, and to store a second compensation value based on a difference between a third value in the second set of values and a fourth value in the fourth set of values.
地址 Boise ID US